Addressing Electromigration Challenges in 3D Integrated Circuits

Electromigration in submicron interconnect features of integrated circuits

Electromigration in Interconnect Structures of Microelectronics Circuits

We present a comprehensive physical model for the whole life cycles of electromigration induced voids. Special emphasis is put on explaining the void morphology and its impact on interconnect resistance. Investigations for common twoand three-dimensional interconnect structures are presented. Implications of the theoretical analysis and the simulation results for modern interconnect design are ...

Designing TSVs for 3D Integrated Circuits

It's not surprisingly when entering this site to get the book. One of the popular books now is the designing tsvs for 3d integrated circuits. You may be confused because you can't find the book in the book store around your city. Commonly, the popular book will be sold quickly. And when you have found the store to buy the book, it will be so hurt when you run out of it. This is why, searching f...

Metrology Requirements for Manufacturing 3d Integrated Circuits

Three-dimensional integrated circuits (3D ICs) introduce wafer bonding and Through Silicon Vias (TSVs) as new modules, thus extending manufacturing requirements beyond CMOS. A 3D IC with a photosensor is taken as an example to further analyze the resulting new metrology requirements for mass production. For the wafer bond module, data on defects before and after bonding, bond interface adhesion...

3D-Via Driven Partitioning for 3D VLSI Integrated Circuits

A 3D circuit is the stacking of regular 2D circuits. The advances on the fabrication and packaging technologies allowed interconnecting stacked 2D circuits by using 3D vias. However, 3D-vias can impose significant obstacles and constraints to the 3D placement problem. Most of the existing placement algorithms completely ignore this fact, but they do optimize the number of vias using a min-cut p...